Curator - David G. Larsen


ISBN: 0-672-21686-8

Authors: Howard M. Berlin
Robert T. Stone

Publisher: Howard W. Sams & Co., Inc.
4300 West 62nd St.
Indianapolis, IN 46268

Copyright: 1980


The VMOSFET (Vertical Metal Oxide Semiconductor Field-Effect Transistor) is a step toward the ideal circuit element. In the evolution of solid-state technology, VMOS devices follow the bipolar junction transistor, the field effect transistor, and the CMOS. The VMOSFET has impressive characteristics, such as high input impedances, nanosecond switching times, low feedback capacitance, no thermal runway or second breakdown, high transconductance, and low on-state voltage. The VMOSFETs overcome the severe nonlinearities, frequency, and switching speed limitations of the bipolar device, and the poor linearity and high on-state voltage of conventional MOS devices. This book begins by comparing the VMOS to ideal characteristics. This is followed by a discussion of the theory of semiconductor operation, applications and limitations of VMOS devices, basic circuit configurations, audio circuit applications, radio frequency applications, power supply applications, microcomputer applications, and large scale integration devices. Chapter 11 lists the rules for setting up experiments, format for the experiments, equipment required for the experiments, and takes you step-by-step through nine experiments that are designed to illustrate the measurement of several VMOS device parameters and amplifier circuits. Appendix A contains a glossary of terms used in this book, and Appendix B contains reproduced manufacturers' data sheets.

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